• DocumentCode
    1649930
  • Title

    High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping

  • Author

    Morii, Kiyohito ; Iwasaki, Takashi ; Nakane, Ryosho ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO2/Ge nMOSFETs have achieved high electron mobility of 804 cm2/Vs with maintaining low junction leakage current of 10-3 A/cm2 and high Ion/Ioff ratio of 104.
  • Keywords
    MOCVD coatings; MOSFET; electron mobility; elemental semiconductors; germanium; semiconductor doping; GeO2-Ge; MOVPE based gas phase doping; electron mobility; n-channel MOSFET; source-drain junctions; CMOS technology; Diodes; Doping; Electron mobility; Hydrogen; Inductors; Ion implantation; Leakage current; MOSFETs; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424248
  • Filename
    5424248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649930