Title :
Design and Evaluation of an SOI Pixel Sensor for Trigger-Driven X-Ray Readout
Author :
Takeda, Akiko ; Arai, Yutaro ; Ryu, S.G. ; Nakashima, S. ; Tsuru, Takeshi Go ; Imamura, Takashi ; Ohmoto, T. ; Iwata, A.
Author_Institution :
Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba, Japan
Abstract :
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. This sensor is called XRPIX. Our objective is to replace the X-ray CCD, which is currently the standard detector in the field, with the developed XRPIX, which offers high coincidence time resolution (~ 50 ns), superior hit-position readout time (~ 10 μs), and wide bandpass (0.5-40 keV), in addition to having comparable performance in terms of imaging spectroscopy. In our previous study, we built a prototype sensor called XRPIX1 and confirmed its basic X-ray imaging spectroscopy performance in a mode that read out the entire area (all pixels). The next step is to realize a high-speed, intelligent readout for X-ray detection. XRPIX1 comprises a trigger circuit for each pixel, so as to detect an X-ray photon injection; this system is capable of direct access to selected pixels to read out the signal amplitude. We describe the design of the trigger circuitry system and report on the first resolved X-ray spectra obtained in the trigger-driven readout mode.
Keywords :
CCD image sensors; CMOS image sensors; X-ray detection; X-ray imaging; X-ray spectra; nuclear electronics; readout electronics; silicon radiation detectors; silicon-on-insulator; SOI pixel sensor; X-ray CCD; X-ray astronomical satellite missions; X-ray imaging spectroscopy; X-ray photon injection; XRPIX1 prototype sensor; high coincidence time resolution; imaging spectroscopy; monolithic active pixel sensor; resolved X-ray spectra; silicon-on-insulator CMOS technology; superior hit-position readout time; trigger circuitry system; trigger-driven X-ray readout; trigger-driven readout mode; Detectors; Energy resolution; Field programmable gate arrays; Noise; Silicon on insulator technology; Threshold voltage; Timing; Active pixel sensor (APS); X-ray astronomy; correlated double sampling (CDS); intra-pixel trigger function; silicon-on-insulator (SOI) pixel sensor;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2225072