Title :
Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling
Author :
Hokazono, A. ; Itokawa, H. ; Mizushima, I. ; Kawanaka, S. ; Inaba, S. ; Toyoshima, Y.
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
Abstract :
Steep channel impurity-profiles formed by Si:C+Si epitaxial growth have been extensively studied. Especially in pMOS, several concerns are solved by boron-doping underneath Si:C layers. Finally, performance improvement realized by steep channel profiles has been demonstrated in both nMOS and pMOS with the same epitaxial channel structure.
Keywords :
MOSFET; boron; doping profiles; epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon compounds; Si-Si:C; SiC:B; boron doping; continual bulk-CMOS scaling; epitaxial channel structure; epitaxial growth; nMOS; pMOS; steep channel impurity-profiles; Dielectric devices; Electrostatics; Implants; Optical films; Parasitic capacitance; Random access memory; Silicides; Silicon compounds; Tin; Wiring;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424250
