• DocumentCode
    1650017
  • Title

    Steep channel profiles in n/pMOS controlled by boron-doped Si:C layers for continual bulk-CMOS scaling

  • Author

    Hokazono, A. ; Itokawa, H. ; Mizushima, I. ; Kawanaka, S. ; Inaba, S. ; Toyoshima, Y.

  • Author_Institution
    Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Steep channel impurity-profiles formed by Si:C+Si epitaxial growth have been extensively studied. Especially in pMOS, several concerns are solved by boron-doping underneath Si:C layers. Finally, performance improvement realized by steep channel profiles has been demonstrated in both nMOS and pMOS with the same epitaxial channel structure.
  • Keywords
    MOSFET; boron; doping profiles; epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon compounds; Si-Si:C; SiC:B; boron doping; continual bulk-CMOS scaling; epitaxial channel structure; epitaxial growth; nMOS; pMOS; steep channel impurity-profiles; Dielectric devices; Electrostatics; Implants; Optical films; Parasitic capacitance; Random access memory; Silicides; Silicon compounds; Tin; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424250
  • Filename
    5424250
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650017