DocumentCode
1650202
Title
Mass transport of aluminum by momentum exchange with conducting electrons
Author
Black, James R.
Author_Institution
Motorola Inc., Phoenix, AZ, USA
fYear
2005
Firstpage
1
Lastpage
6
Keywords
aluminium; electromigration; failure analysis; grain boundary diffusion; integrated circuit reliability; power integrated circuits; power semiconductor devices; self-diffusion; semiconductor device reliability; surface diffusion; 100 degC; Al; activation energy; aluminum mass transport; conducting electron momentum exchange; conductor current density; conductor failure mode; conductor film structure; conductor life; cracked stripe; disappearing aluminum; grain-boundary diffusion; high power IC; high power devices; lattice self-diffusion energy; open circuit; surface diffusion; Aluminum; Conductive films; Conductors; Crystallization; Current density; Electrons; Equations; Integrated circuit reliability; Physics; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493053
Filename
1493053
Link To Document