1650202

Mass transport of aluminum by momentum exchange with conducting electrons

Black, James R.

Motorola Inc., Phoenix, AZ, USA

2005

1

6

aluminium; electromigration; failure analysis; grain boundary diffusion; integrated circuit reliability; power integrated circuits; power semiconductor devices; self-diffusion; semiconductor device reliability; surface diffusion; 100 degC; Al; activation energy; aluminum mass transport; conducting electron momentum exchange; conductor current density; conductor failure mode; conductor film structure; conductor life; cracked stripe; disappearing aluminum; grain-boundary diffusion; high power IC; high power devices; lattice self-diffusion energy; open circuit; surface diffusion; Aluminum; Conductive films; Conductors; Crystallization; Current density; Electrons; Equations; Integrated circuit reliability; Physics; Temperature;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493053

1493053