1650252

Observation and restoration of negative electromigration activation energy behavior due to thermo-mechanical effects

Park, Young-Joon ; Lee, Ki-Don ; Hunter, William R.

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

2005

18

23

copper; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit reliability; mechanical stability; thermal stability; 250 degC; Cu; electromigration lifetime; fast failure mode; inter-layer dielectric; low-k dielectrics; negative activation energy behavior; sidewall barrier thickening; single damascene interconnects; thermo-mechanical damage; thermo-mechanical stability; via mechanical strengthening; Atomic layer deposition; Compressive stress; Dielectrics; Electromigration; Instruments; Silicon; Temperature dependence; Thermal stability; Thermal stresses; Thermomechanical processes;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493055

1493055