• DocumentCode
    1650252
  • Title

    Observation and restoration of negative electromigration activation energy behavior due to thermo-mechanical effects

  • Author

    Park, Young-Joon ; Lee, Ki-Don ; Hunter, William R.

  • Author_Institution
    Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2005
  • Firstpage
    18
  • Lastpage
    23
  • Keywords
    copper; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit reliability; mechanical stability; thermal stability; 250 degC; Cu; electromigration lifetime; fast failure mode; inter-layer dielectric; low-k dielectrics; negative activation energy behavior; sidewall barrier thickening; single damascene interconnects; thermo-mechanical damage; thermo-mechanical stability; via mechanical strengthening; Atomic layer deposition; Compressive stress; Dielectrics; Electromigration; Instruments; Silicon; Temperature dependence; Thermal stability; Thermal stresses; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493055
  • Filename
    1493055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650252