1650279

Impact of via-line contact on CU interconnect electromigration performance

Li, Baozhen ; Gill, Jason ; Christiansen, Cathryn J. ; Sullivan, Timothy D. ; McLaughlin, Paul S.

IBM Syst. & Technol. Group, Essex Junction, VT, USA

2005

24

30

copper; electromigration; integrated circuit interconnections; integrated circuit reliability; redundancy; voids (solid); Cu; copper/top cap layer interface; damascene processing; interconnect electromigration; line depletion; line extension; open-circuit failures; redundant vias; via depletion; via liner quality; via-line contact effects; via/line contact configurations; voiding; Adhesives; Contact resistance; Copper; Electromigration; Electrons; Failure analysis; Joining processes; Redundancy; Shape; Stress;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493056

1493056