1650301

The impact of partially scaled metal barrier shunting on failure criteria for copper electromigration resistance increase in 65nm technology

Lee, Ki-Don ; Park, Young-Joon ; Hunter, Bill

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

2005

31

35

copper; electromigration; integrated circuit interconnections; integrated circuit reliability; voids (solid); 65 nm; Cu; EM activation energy; barrier layer current shunting; bi-modal distribution; dual-damascene interconnect current exponent; failure criteria; full span void formation; interconnect failure time; length direction void growth; partially scaled metal barrier shunting effects; resistance step; sloped electromigration resistance increase; Cathodes; Copper; Delay; Dielectrics; Electric resistance; Electromigration; Glass; Instruments; Silicon; Testing;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493057

1493057