Title :
One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS
Author :
Ryu, Seong-Wan ; Han, Jin-Woo ; Moon, Dong-II ; Choi, Yang-Kyu
Author_Institution :
EECS, KAIST, Daejeon, South Korea
Abstract :
A one-transistor nonvolatile SRAM (ONSRAM) on a silicon nanowire (SiNW) SONOS is demonstrated. A nonvolatile memory (NVM) property is attained by employment of O/N/O gate dielectric stacks as an electron storage node, and SRAM functionality is achieved by exploiting latch phenomena of a floating body in SiNW. Abrupt inverter switching, superior sensing current (¿21¿A), and robust interference immunity between SRAM and NVM verify the feasibility for the suggested ONSRAM.
Keywords :
SRAM chips; elemental semiconductors; flip-flops; nanowires; semiconductor-insulator-semiconductor devices; silicon; switching circuits; O/N/O gate dielectric stacks; ONSRAM; SRAM functionality; Si; SiNW; electron storage node; inverter switching; latch phenomena; nonvolatile memory property; one-transistor nonvolatile SRAM; robust interference immunity; sensing current; silicon nanowire SONOS; Dielectrics; Electrons; Employment; Interference; Inverters; Nonvolatile memory; Random access memory; Robustness; SONOS devices; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424259
