Title :
Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability
Author :
Ishiduki, Megumi ; Fukuzumi, Yoshiaki ; Katsumata, Ryota ; Kito, Masaru ; Kido, Masaru ; Tanaka, Hiroyasu ; Komori, Yosuke ; Nagata, Yuzo ; Fujiwara, Tomoko ; Maeda, Takashi ; Mikajiri, Yoshimasa ; Oota, Shigeto ; Honda, Makoto ; Iwata, Yoshihisa ; Kirisa
Author_Institution :
Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
Abstract :
An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability.
Keywords :
flash memories; reliability theory; asymmetric source/drain profile; data storage device; metal salicided control gate; optimal device structure; pipe-shaped BiCS flash memory; pipe-shaped bit cost scalable flash memory; ultra high density storage device; Character generation; FETs; Flash memory; Information systems; Leakage current; Manufacturing processes; Semiconductor device reliability; Shape control; Stereolithography; Wiring;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424261
