• DocumentCode
    1650432
  • Title

    Trap generation and progressive wearout in thin HfSiON

  • Author

    Kauerauf, T. ; Degraeve, R. ; Crupi, F. ; Kaczer, B. ; Groesencken, G. ; Maes, H.

  • Author_Institution
    IMEC, Heverlee, Belgium
  • fYear
    2005
  • Firstpage
    45
  • Lastpage
    49
  • Keywords
    MOCVD; MOSFET; dielectric materials; hafnium compounds; tunnelling; 1.38 to 2.14 nm; HfSiON; HfSiON dielectrics; MOCVD; degradation rate; direct tunneling; poly-Si gate; progressive wearout; thin HfSiON; time-to-breakdown characteristics; trap generation; Boron; Degradation; Dielectric constant; Dielectric devices; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493060
  • Filename
    1493060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650432