1650432

Trap generation and progressive wearout in thin HfSiON

Kauerauf, T. ; Degraeve, R. ; Crupi, F. ; Kaczer, B. ; Groesencken, G. ; Maes, H.

IMEC, Heverlee, Belgium

2005

45

49

MOCVD; MOSFET; dielectric materials; hafnium compounds; tunnelling; 1.38 to 2.14 nm; HfSiON; HfSiON dielectrics; MOCVD; degradation rate; direct tunneling; poly-Si gate; progressive wearout; thin HfSiON; time-to-breakdown characteristics; trap generation; Boron; Degradation; Dielectric constant; Dielectric devices; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493060

1493060