Author :
Jung, Hyung-Suk ; Han, Sung Kee ; Kim, Min Joo ; Kim, Jong Pyo ; Kim, Yun-Seok ; Lim, Ha Jin ; Doh, Seok Joo ; Lee, Jung Hyoung ; Yu, Mi Young ; Lee, Jong-Ha ; Lee, Nae-ln ; Kang, Ho-Kyu ; Park, Seong Geon ; Kang, Sang Bom
Author_Institution :
Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Keywords :
arsenic; dielectric materials; hafnium compounds; hot carriers; phosphorus; semiconductor device reliability; semiconductor doping; silicon; thermal stability; HfON; HfSiON; Si:As; Si:P; gate dopants; hafnium-based dielectrics; high-k gate dielectrics; hot carrier injection; metal inserted poly-Si stack gates; poly-silicon; positive bias temperature instability; reliability characteristics; Boron; CMOS process; CMOS technology; Degradation; Electrodes; High K dielectric materials; High-K gate dielectrics; Human computer interaction; Large scale integration; MOSFET circuits;
