• DocumentCode
    1650445
  • Title

    PBTI & HCI characteristics for high-k gate dielectrics with poly-si & MIPS (metal inserted poly-si stack) gates

  • Author

    Jung, Hyung-Suk ; Han, Sung Kee ; Kim, Min Joo ; Kim, Jong Pyo ; Kim, Yun-Seok ; Lim, Ha Jin ; Doh, Seok Joo ; Lee, Jung Hyoung ; Yu, Mi Young ; Lee, Jong-Ha ; Lee, Nae-ln ; Kang, Ho-Kyu ; Park, Seong Geon ; Kang, Sang Bom

  • Author_Institution
    Adv. Process Dev. Project, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
  • fYear
    2005
  • Firstpage
    50
  • Lastpage
    54
  • Keywords
    arsenic; dielectric materials; hafnium compounds; hot carriers; phosphorus; semiconductor device reliability; semiconductor doping; silicon; thermal stability; HfON; HfSiON; Si:As; Si:P; gate dopants; hafnium-based dielectrics; high-k gate dielectrics; hot carrier injection; metal inserted poly-Si stack gates; poly-silicon; positive bias temperature instability; reliability characteristics; Boron; CMOS process; CMOS technology; Degradation; Electrodes; High K dielectric materials; High-K gate dielectrics; Human computer interaction; Large scale integration; MOSFET circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493061
  • Filename
    1493061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650445