Monolithic integration of NEMS-CMOS with a Fin Flip-flop Actuated Channel Transistor (FinFACT)

Monolithic integration of NEMS-CMOS for a mechanically flip-flopped fin memory transistor is demonstrated via full CMOS process technology. An independent-gate (IG) FinFET is employed for CMOS logic, and a fin flip-flop actuated channel is used for NEMS memory. As the fin is actuated between the flip-flopped states, the proposed NEMS memory is referred to as a Fin Flip-flop Actuated Channel Transistor (FinFACT). The bistable mechanical flexure of the fin determines the binary memory state, which is sensed by the current flow of the transistor. The FinFACT demonstrates an excellent sensing current window (I_on/I_off > 10⁷), a long data retention time (¿ > 10³ sec), and good endurance characteristics (cycle > 10³) in air.