1650474

Interface states in HFO₂ stacks with metal gate: nature, passivation, generation

Garros, X. ; Reimbold, G. ; Duret, D. ; Leroux, C. ; Guillaumot, B. ; Louveau, O. ; Hobbs, C. ; Martin, F.

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

2005

55

60

MIS devices; dielectric thin films; hafnium compounds; hydrogen; interface states; passivation; rapid thermal annealing; semiconductor device breakdown; semiconductor device reliability; titanium compounds; 425 degC; 530 degC; 900 degC; FGA; H; HfO₂-TiN; MOS capacitors; MOS devices; MOSFET process flow; NBTI; Si-SiO_x; SiO_x-HfO₂; atomic plasma annealing; device breakdown; device lifetimes; forming gas anneals; high temperature RTP; interface defects; interface state generation; metal gate dielectric stacks; passivation; reliability; stress interruption; Annealing; Capacitors; Degradation; Hafnium oxide; Hydrogen; Interface states; Passivation; Plasma temperature; Stress; Tin;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493062

1493062