• DocumentCode
    1650504
  • Title

    High-K dielectrics breakdown accurate lifetme assessment methodology

  • Author

    Ribes, G. ; Bruyere, S. ; Denais, M. ; Monsieur, F. ; Roy, D. ; Vincent, E. ; Ghibaudo

  • Author_Institution
    Central R&D Labs., STMicroelectron., Crolles, France
  • fYear
    2005
  • Firstpage
    61
  • Lastpage
    66
  • Keywords
    dielectric thin films; interface states; percolation; semiconductor device breakdown; semiconductor device reliability; statistical analysis; CMOS; H; HBD; MVHR process; PBD; SBD; degradation mechanisms; dielectric lifetime assessment methodology; gate dielectric; hard breakdown; high-k dielectrics breakdown; high-k layer breakdown; high-k structure reliability; interfacial layer breakdown; interfacial layer percolation path; multivibrational hydrogen release process; progressive breakdown; soft breakdown; statistical analysis; CMOS technology; Degradation; Dielectric breakdown; Dielectric materials; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Joining processes; Lead compounds; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493064
  • Filename
    1493064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650504