1650504

High-K dielectrics breakdown accurate lifetme assessment methodology

Ribes, G. ; Bruyere, S. ; Denais, M. ; Monsieur, F. ; Roy, D. ; Vincent, E. ; Ghibaudo

Central R&D Labs., STMicroelectron., Crolles, France

2005

61

66

dielectric thin films; interface states; percolation; semiconductor device breakdown; semiconductor device reliability; statistical analysis; CMOS; H; HBD; MVHR process; PBD; SBD; degradation mechanisms; dielectric lifetime assessment methodology; gate dielectric; hard breakdown; high-k dielectrics breakdown; high-k layer breakdown; high-k structure reliability; interfacial layer breakdown; interfacial layer percolation path; multivibrational hydrogen release process; progressive breakdown; soft breakdown; statistical analysis; CMOS technology; Degradation; Dielectric breakdown; Dielectric materials; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Joining processes; Lead compounds; Research and development;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493064

1493064