1650568

Comparison of NMOS and PMOS stress for determining the source of NBTI TiN/HfSiON devices

Harris, H. Rusty ; Choi, Rino ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Mathews, K. ; Zeitzoff, P. ; Majhi, P. ; Bersuker, G.

SEMATECH, Austin, TX, USA

2005

80

83

MOSFET; dielectric thin films; electron traps; hafnium compounds; semiconductor device models; semiconductor device reliability; titanium compounds; FET reliability; NBTI; NMOS transistors; PMOS transistors; TiN-HfSiON; dangling bond passivation; deep electron traps; high-k gate stack structures; hydrogen hole-assisted dissociation; negative gate stress cycle dependence; positive gate de-trapping; reversible charge trapping; shallow electron traps; threshold voltage instability; threshold voltage shift; Annealing; Dielectric substrates; Electron traps; MOS devices; Niobium compounds; Pulse measurements; Stress measurement; Threshold voltage; Tin; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493067

1493067