1650589

ESD induced damage on ultra-thin gate oxide mosfets and its impact on device reliability

Cester, A. ; Gerardin, S. ; Tazzoli, A. ; Paccagnella, A. ; Zanoni, E. ; Ghidini, G. ; Meneghesso, G.

Dipt. di Ingegneria dell´´Informazione, Padova Univ., Italy

2005

84

90

MOSFET; electrostatic discharge; semiconductor device reliability; CMOS; ESD induced damage; MOSFET current driving capability; MOSFET reliability; TTBD distributions; accelerated electrical stresses; destructive electrostatic discharge events; drain terminal; gate oxide thickness; gate oxide time-to-breakdown; gate terminal; nondestructive ESD events; transistor electrical characteristics degradation; ultra-thin gate oxide MOSFET; Biological system modeling; CMOS technology; Degradation; Electric breakdown; Electrostatic discharge; MOSFETs; Pins; Protection; Stress; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493068

1493068