• DocumentCode
    1650589
  • Title

    ESD induced damage on ultra-thin gate oxide mosfets and its impact on device reliability

  • Author

    Cester, A. ; Gerardin, S. ; Tazzoli, A. ; Paccagnella, A. ; Zanoni, E. ; Ghidini, G. ; Meneghesso, G.

  • Author_Institution
    Dipt. di Ingegneria dell´´Informazione, Padova Univ., Italy
  • fYear
    2005
  • Firstpage
    84
  • Lastpage
    90
  • Keywords
    MOSFET; electrostatic discharge; semiconductor device reliability; CMOS; ESD induced damage; MOSFET current driving capability; MOSFET reliability; TTBD distributions; accelerated electrical stresses; destructive electrostatic discharge events; drain terminal; gate oxide thickness; gate oxide time-to-breakdown; gate terminal; nondestructive ESD events; transistor electrical characteristics degradation; ultra-thin gate oxide MOSFET; Biological system modeling; CMOS technology; Degradation; Electric breakdown; Electrostatic discharge; MOSFETs; Pins; Protection; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493068
  • Filename
    1493068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650589