Title :
GaAs MMICs for EHF SATCOM ground terminals
Author :
Hampel, Daniel ; Upton, Alastair
Author_Institution :
GE/RCA Gov. Commun. Syst., Camden, NJ, USA
Abstract :
The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<>
Keywords :
MMIC; gallium arsenide; military equipment; satellite ground stations; 20 GHz; 44 GHz; EHF SATCOM ground terminals; GaAs; HEMTs; MMICs; analog RF front end; high-electron-mobility transistors; low-noise amplifiers; military equipment; monolithic microwave integrated circuits; power amplifiers; satellite ground stations; Analog integrated circuits; Digital integrated circuits; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency integrated circuits;
Conference_Titel :
Military Communications Conference, 1988. MILCOM 88, Conference record. 21st Century Military Communications - What's Possible? 1988 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/MILCOM.1988.13473
