1650660

Study of factors limiting ESD diode performance in 90nm CMOS technologies and beyond

Chatty, K. ; Gauthier, R. ; Putnam, C. ; Muhammad, M. ; Woo, M. ; Li, J. ; Halbach, R. ; Seguin, C.

Semicond. Res. & Dev. Center, IBM Syst. & Technol. Group, Essex Junction, VT, USA

2005

98

105

CMOS integrated circuits; electrostatic discharge; power semiconductor diodes; semiconductor device breakdown; semiconductor device reliability; 0.27 ohm; 1.66 V; 100 ns; 125 fF; 2 A; 300 micron; 5 A; 65 nm; 90 nm; ESD diode limiting factors; P⁺/N-well ESD protection diodes; TLP failure current; anode perimeter; bulk CMOS technologies; contacts; diode failure current; diode on-resistance; forward voltage drop; junction capacitance; metal lines; vias; Atherosclerosis; Breakdown voltage; CMOS technology; Capacitance; Clamps; Electrostatic discharge; MOSFET circuits; Protection; Research and development; Semiconductor diodes;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493070

1493070