Title :
Accurate prediction of the ESD robustness of semiconductor devices through physical simulation
Author :
Salaméro, Christophe ; Nolhier, Nicolas ; Bafleur, Manse ; Zecri, Michel
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Keywords :
electrostatic discharge; power integrated circuits; semiconductor device models; semiconductor device reliability; semiconductor process modelling; technology CAD (electronics); ESD robustness prediction; TCAD; process simulation; semiconductor device physical simulation; smart power technology; stressed device failure current value; transmission line pulse characterization; Bipolar transistors; Computational modeling; Electrostatic discharge; Predictive models; Protection; Robustness; Semiconductor devices; Stress; Temperature; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493071
