• DocumentCode
    1650686
  • Title

    The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness

  • Author

    Voldman, S. ; Gebreselasie, E. ; Lanzerotti, L. ; Larsen, T. ; Feilchenfeld, N. ; St Onge, S. ; Joseph, A. ; Dunn, J.

  • Author_Institution
    IBM Microelectron., Essex Junction, VT, USA
  • fYear
    2005
  • Firstpage
    112
  • Lastpage
    120
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; doping profiles; integrated circuit reliability; isolation technology; BiCMOS; CMOS technology; SiGe; SiO2; latchup robustness; low-cost oxide filled trench isolation structure; low-doped implanted sub-collectors; shallow oxide-filled trench; BiCMOS integrated circuits; CMOS technology; Doping; Germanium silicon alloys; Isolation technology; MOSFET circuits; Radio frequency; Robustness; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493072
  • Filename
    1493072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650686