1650686

The influence of a silicon dioxide-filled trench isolation structure and implanted sub-collector on latchup robustness

Voldman, S. ; Gebreselasie, E. ; Lanzerotti, L. ; Larsen, T. ; Feilchenfeld, N. ; St Onge, S. ; Joseph, A. ; Dunn, J.

IBM Microelectron., Essex Junction, VT, USA

2005

112

120

BiCMOS integrated circuits; CMOS integrated circuits; doping profiles; integrated circuit reliability; isolation technology; BiCMOS; CMOS technology; SiGe; SiO₂; latchup robustness; low-cost oxide filled trench isolation structure; low-doped implanted sub-collectors; shallow oxide-filled trench; BiCMOS integrated circuits; CMOS technology; Doping; Germanium silicon alloys; Isolation technology; MOSFET circuits; Radio frequency; Robustness; Silicon germanium; Substrates;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493072

1493072