Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and Extended Hückel Theory-based NEGF method

Author

Guan, Ximeng ; He, Yu ; Zhao, Liang ; Zhang, Jinyu ; Wang, Yan ; Qian, He ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Switching processes of carbon-based resistive memory cells are simulated on a fully atomistic level by the molecular dynamics (MD) method and the Extended-HuÂ¿ckel-Theory-based Non Equilibrium Green´s Function (EHT-NEGF) method. Graphitic filament breakage and re-growth are found to be responsible for the switching of resistance of carbon-based memory. Key parameters that affect the switching speed of a memory cell are studied and trade-off between speed and power is discussed.

Keywords

EHT calculations; Green´s function methods; carbon; molecular dynamics method; random-access storage; switching circuits; C; EHT-NEGF method; carbon-based resistive memory cells; extended-Huckel-theory; fully atomistic level; graphitic filament breakage; molecular dynamics; non equilibrium Green´s function; switching mechanism; switching speed; Amorphous materials; Electrodes; Green´s function methods; Helium; Information science; Insulation; Laboratories; Microelectronics; Phase change materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424278

Filename

5424278