• DocumentCode
    1650817
  • Title

    Reliability investigations for manufacturable high density PRAM

  • Author

    Kim, Kinam ; Ahn, Su Jin

  • Author_Institution
    Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
  • fYear
    2005
  • Firstpage
    157
  • Lastpage
    162
  • Keywords
    SRAM chips; integrated circuit reliability; integrated circuit testing; phase change materials; 0.12 micron; 64 Mbit; PRAM reliability; chalcogenide memory material; data retention; degradation modes; disturbance immunity; endurance; manufacturable high density PRAM; phase-change memory; reprogrammable nonvolatile memory; Amorphous materials; Conducting materials; Crystallization; Electrodes; Manufacturing; Material storage; Phase change materials; Phase change random access memory; Temperature dependence; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493077
  • Filename
    1493077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650817