Title :
1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing
Author :
Koswatta, Siyuranga O. ; Koester, Steven J. ; Haensch, Wilfried
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on one-dimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60 mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ~20 mV/dec along with ~100x increase in above-threshold current compared to the homojunction geometry.
Keywords :
MOSFET; tunnelling; 1D broken-gap heterostructure geometry; MOSFET-like on-currents; above-threshold current; homojunction geometry; subthreshold swing; tunneling field-effect transistor; Carbon nanotubes; FETs; Geometry; Heterojunctions; MOSFETs; Organic materials; Physics; Semiconductor materials; Solid modeling; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424279
