DocumentCode
1650870
Title
Electron-molecule collisions in semiconductor processing plasmas
Author
McKoy, V. ; Winstead, Chris ; Chuo-Han Lee
Author_Institution
Arthur Amos Noyes Lab. of Chem. Phys., California Inst. of Technol., Pasadena, CA, USA
fYear
1998
Firstpage
269
Abstract
Summary form only given. We will review the progress we have made in exploiting large parallel computers to generate electron collision cross sections for gases of interest to the semiconductor industry. Following an overview of the method employed in these calculations and its computational demands, we will discuss the strategies used to parallelize the compute-intensive steps of these calculations. Results of applications to a few gases used in semiconductor fabrication will then be presented.
Keywords
molecule-electron collisions; physics computing; plasma applications; plasma collision processes; semiconductor technology; compute-intensive steps; electron collision cross sections; electron-molecule collisions; gases; large parallel computers; semiconductor fabrication; semiconductor processing plasmas; Chemical technology; Concurrent computing; Electrons; Fabrication; Gases; Laboratories; Plasma applications; Plasma chemistry; Plasma materials processing; Quantum computing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location
Raleigh, NC, USA
ISSN
0730-9244
Print_ISBN
0-7803-4792-7
Type
conf
DOI
10.1109/PLASMA.1998.677840
Filename
677840
Link To Document