Title :
Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures
Author :
Luisier, Mathieu ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
Band-to-band tunneling transistors (TFETs) made of InSb, Carbon, and GaSb-InAs broken gap heterostructures are simulated using an atomistic and full-band quantum transport solver. The performances of two-dimensional single-gate and double-gate devices as well as three-dimensional gate-all-around structures are analyzed and compared to find the most promising TFET design. All transistor types are able to provide a region with a steep subthreshold slope, but despite their low band gap, InSb-and C-based (graphene nanoribbons and carbon nanotubes) devices do not offer high enough ON-currents, contrary to GaSb-InAs broken gap structures. However, the nanoribbon and nanotube TFETs can operate at much lower supply voltages than the III-V transistors.
Keywords :
III-V semiconductors; carbon; field effect transistors; gallium compounds; indium compounds; tunnelling; C; GaSb-InAs; InSb; atomistic quantum transport solver; band-to-band tunneling transistors; broken gap heterostructures; full-band quantum transport solver; nanoribbon TFET; nanotube TFET; steep subthreshold slope; three-dimensional gate-all-around structure; tunneling field-effect transistors; two-dimensional single-gate double-gate device; Carbon nanotubes; Computational modeling; FETs; III-V semiconductor materials; MOSFETs; Nanoscale devices; Nanowires; Photonic band gap; Quantum computing; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424280
