DocumentCode
1650935
Title
The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products
Author
Janai, Meir ; Eitan, Boaz
Author_Institution
Saifun Semicond. Ltd., Netanya, Israel
fYear
2005
Firstpage
175
Lastpage
180
Keywords
EPROM; PROM; electron traps; flash memories; integrated circuit reliability; NROM reliability; NVM; SiN; code flash memory; data retention degradation kinetics; dispersive transport; junction edge hole accumulation; laterally migrating excess holes; nitride-based localized-trapping; nonvolatile memory; parallel EEPROM; post-cycled NROM; retention bake; serial flash memory; threshold voltage drift; trapped electrons; Charge carrier processes; Degradation; Dispersion; Electron traps; Kinetic theory; MOSFETs; Nonvolatile memory; Silicon compounds; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493080
Filename
1493080
Link To Document