1650960

Comparative reliability investigation of different nitride based local charge trapping memory devices

Breuil, L. ; Haspeslagh, L. ; Blomme, P. ; Lorenzini, M. ; Wellekens, D. ; De Vos, J. ; Van Houdt, J.

IMEC, Leuven, Belgium

2005

181

185

electron traps; hole traps; semiconductor device reliability; semiconductor storage; silicon-on-insulator; SONOS; Si-SiO-SiN; bottom oxide; electron injection points; endurance characteristics; hole injection points; hole trapping; nitride based local charge trapping memory devices; nonvolatile memories; reliability investigation; retention characteristics; silicon-oxide-nitride-oxide-silicon devices; CMOS process; Character generation; Charge carrier processes; Degradation; Electron traps; Hot carriers; Nonvolatile memory; SONOS devices; Split gate flash memory cells; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493081

1493081