1650980

Mechanism of drain disturb in SONOS flash EEPROMs

Kumar, P. Bharath ; Sharma, Ravinder ; Nair, Pradeep R. ; Nair, Deleep R. ; Kamohara, S. ; Mahapatra, S. ; Vasi, J.

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

2005

186

190

flash memories; impact ionisation; leakage currents; semiconductor device reliability; substrates; superconductive tunnelling; SONOS flash EEPROM; Si-SiO-SiN; band-to-band tunneling; channel leakage current; drain disturb; drain junction; drain stress; flash memory cells; impact ionization; reliability problems; silicon-oxide-nitride-oxide-silicon devices; substrate; Channel bank filters; Charge carrier processes; Charge pumps; Charge transfer; EPROM; Hot carriers; Monte Carlo methods; Physics; SONOS devices; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493082

1493082