Title :
Nanowire based electronics: Challenges and prospects
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled devices. Three different approaches have been developed to address the critical device integration issue.
Keywords :
nanoelectronics; nanowires; chemically synthesized nanowires; critical device integration issue; electrical integrity; nanowire based electronics; one-dimensional NW structure; scaled devices; single-transistor level; Assembly; Chemicals; Computer science; Delay estimation; Electron mobility; MOSFET circuits; Nanoscale devices; Nanostructured materials; Scattering; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424283
