• DocumentCode
    1651007
  • Title

    Scaling effect on electromigration reliability for CU/low-k interconnects

  • Author

    Pyun, J.W. ; Lu, X. ; Yoon, S. ; Henis, N. ; Neuman, K. ; Pfeifer, K. ; Ho, P.S.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2005
  • Firstpage
    191
  • Lastpage
    194
  • Keywords
    copper; dielectric materials; electromigration; failure analysis; integrated circuit interconnections; porous materials; semiconductor device reliability; 0.25 to 0.175 micron; 75 to 175 A; 90 to 180 nm; Cu; Ta; barrier thickness; confinement effect; copper interconnects; effective elastic modulus; electromigration reliability; line width; porous dielectrics; porous low-k dielectrics; scaling effects; strong-mode failures; weak-mode early failures; Degradation; Dielectrics; Electromigration; Laboratories; Microelectronics; Packaging; Partial response channels; Postal services; Statistics; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493083
  • Filename
    1493083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651007