1651007

Scaling effect on electromigration reliability for CU/low-k interconnects

Pyun, J.W. ; Lu, X. ; Yoon, S. ; Henis, N. ; Neuman, K. ; Pfeifer, K. ; Ho, P.S.

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

2005

191

194

copper; dielectric materials; electromigration; failure analysis; integrated circuit interconnections; porous materials; semiconductor device reliability; 0.25 to 0.175 micron; 75 to 175 A; 90 to 180 nm; Cu; Ta; barrier thickness; confinement effect; copper interconnects; effective elastic modulus; electromigration reliability; line width; porous dielectrics; porous low-k dielectrics; scaling effects; strong-mode failures; weak-mode early failures; Degradation; Dielectrics; Electromigration; Laboratories; Microelectronics; Packaging; Partial response channels; Postal services; Statistics; Testing;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493083

1493083