• DocumentCode
    1651024
  • Title

    The dielectric material dependence of stress and stress relaxation on the mechanism of stress-voiding of CU interconnects

  • Author

    Paik, Long-Min ; Jung, Jung-Kyu ; Joo, Young-Chang

  • Author_Institution
    Seoul Nat. Univ., South Korea
  • fYear
    2005
  • Firstpage
    195
  • Lastpage
    202
  • Keywords
    copper; dielectric materials; finite element analysis; grain size; integrated circuit interconnections; integrated circuit reliability; semiconductor device reliability; stress effects; thermal stresses; Cu; damascene copper interconnects; dielectric material; grain size; growth stress; high performance integrated circuits; hydrostatic stress; interconnect reliability; line width; microstructure; stress relaxation; stress-voiding; thermomechanical stress; via; Artificial intelligence; Copper; Dielectric materials; Grain size; Integrated circuit interconnections; Integrated circuit reliability; Tensile stress; Thermal expansion; Thermal stresses; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493084
  • Filename
    1493084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651024