1651024

The dielectric material dependence of stress and stress relaxation on the mechanism of stress-voiding of CU interconnects

Paik, Long-Min ; Jung, Jung-Kyu ; Joo, Young-Chang

Seoul Nat. Univ., South Korea

2005

195

202

copper; dielectric materials; finite element analysis; grain size; integrated circuit interconnections; integrated circuit reliability; semiconductor device reliability; stress effects; thermal stresses; Cu; damascene copper interconnects; dielectric material; grain size; growth stress; high performance integrated circuits; hydrostatic stress; interconnect reliability; line width; microstructure; stress relaxation; stress-voiding; thermomechanical stress; via; Artificial intelligence; Copper; Dielectric materials; Grain size; Integrated circuit interconnections; Integrated circuit reliability; Tensile stress; Thermal expansion; Thermal stresses; Thermomechanical processes;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493084

1493084