DocumentCode
1651053
Title
Enhanced radical formation by electron attachment to highly-excited states of molecules in plasmas
Author
Ding, W.X. ; McCorkle, D.L. ; Pinnaduwage, L.A.
Author_Institution
Div. of Life Scis., Oak Ridge Nat. Lab., TN, USA
fYear
1998
Firstpage
270
Abstract
Summary form only given. Large number densities of radicals are required in plasma assisted material processing where the formation of radicals is governed by conventional plasma chemical process. Operational pressure in plasma reactors has been greatly reduced to 10/sup -3/-10/sup -4/ torr to achieve the good control of particles transport toward the substrate. However low operational pressure results in the relatively low deposition rate. Therefore new plasma chemical reactions have to be pursued in order to efficiently produce radicals. We present a new experimental technique to obtain enhanced radical formation by electron attachment to highly excited state of molecules.
Keywords
electron attachment; plasma applications; plasma collision processes; plasma density; 1E-3 to 1E-4 torr; electron attachment; enhanced radical formation; highly excited state; highly-excited states; molecules; operational pressure; particles transport; plasma assisted material processing; plasma chemical process; plasma reactors; plasmas; radical number density; Breakdown voltage; Dielectric breakdown; Electrons; Nuclear and plasma sciences; Plasma chemistry; Plasma confinement; Plasma density; Plasma materials processing; Plasma measurements; Plasma sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location
Raleigh, NC, USA
ISSN
0730-9244
Print_ISBN
0-7803-4792-7
Type
conf
DOI
10.1109/PLASMA.1998.677841
Filename
677841
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