• DocumentCode
    1651053
  • Title

    Enhanced radical formation by electron attachment to highly-excited states of molecules in plasmas

  • Author

    Ding, W.X. ; McCorkle, D.L. ; Pinnaduwage, L.A.

  • Author_Institution
    Div. of Life Scis., Oak Ridge Nat. Lab., TN, USA
  • fYear
    1998
  • Firstpage
    270
  • Abstract
    Summary form only given. Large number densities of radicals are required in plasma assisted material processing where the formation of radicals is governed by conventional plasma chemical process. Operational pressure in plasma reactors has been greatly reduced to 10/sup -3/-10/sup -4/ torr to achieve the good control of particles transport toward the substrate. However low operational pressure results in the relatively low deposition rate. Therefore new plasma chemical reactions have to be pursued in order to efficiently produce radicals. We present a new experimental technique to obtain enhanced radical formation by electron attachment to highly excited state of molecules.
  • Keywords
    electron attachment; plasma applications; plasma collision processes; plasma density; 1E-3 to 1E-4 torr; electron attachment; enhanced radical formation; highly excited state; highly-excited states; molecules; operational pressure; particles transport; plasma assisted material processing; plasma chemical process; plasma reactors; plasmas; radical number density; Breakdown voltage; Dielectric breakdown; Electrons; Nuclear and plasma sciences; Plasma chemistry; Plasma confinement; Plasma density; Plasma materials processing; Plasma measurements; Plasma sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
  • Conference_Location
    Raleigh, NC, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-4792-7
  • Type

    conf

  • DOI
    10.1109/PLASMA.1998.677841
  • Filename
    677841