Title :
Novel T-channel nanowire FET with built-in signal amplification for pH sensing
Author :
Shin, Kyeong-Sik ; Lee, Kyunghoon ; Kang, Ji Yoon ; Chui, Chi On
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
The low level of output signal in conventional silicon nanowire field-effect transistors (FETs) could limit their potential deployments as integrated chemical and biomedical sensors. We have proposed in this work a novel T-shape channel nanowire FET with a built-in signal amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET sensors, we have experimentally extracted from the novel device a significant improvement of almost 50 times in pH detection sensitivity.
Keywords :
MOSFET; chemical sensors; elemental semiconductors; nanofabrication; nanowires; pH measurement; semiconductor quantum wires; silicon; Si; T-channel nanowire FET; biomedical sensor; built-in signal amplification; integrated chemical sensor; pH sensing; silicon nanowire field-effect transistors; Biosensors; Chemical engineering; Chemical sensors; Chemical technology; FETs; Hydrogen; Nanoscale devices; Schottky barriers; Signal processing; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424288
