DocumentCode
1651236
Title
High-k materials for nonvolatile memory applications
Author
Van Houdt, Jan
Author_Institution
IMEC vzw, Leuven, Belgium
fYear
2005
Firstpage
234
Lastpage
239
Keywords
dielectric materials; flash memories; random-access storage; semiconductor device reliability; charge trapping devices; engineered barriers; flash memories; high-k materials; interpoly dielectrics; nonvolatile memory devices; reliability issues; tunnel dielectrics; Ferroelectric materials; Flash memory; High K dielectric materials; High-K gate dielectrics; Magnetic materials; Nonvolatile memory; Phase change materials; Random access memory; Reliability engineering; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493090
Filename
1493090
Link To Document