DocumentCode
1651240
Title
High-speed graphene interconnects monolithically integrated with CMOS ring oscillators operating at 1.3GHz
Author
Chen, Xiangyu ; Lee, Kyeong-Jae ; Akinwande, Deji ; Close, Gael F. ; Yasuda, Shinichi ; Paul, Bipul ; Fujita, Shinobu ; Kong, Jing ; Wong, H. S Philip
Author_Institution
Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
fYear
2009
Firstpage
1
Lastpage
4
Abstract
We have successfully experimentally integrated graphene interconnects with commercial 0.25 ¿m technology CMOS ring oscillator circuit using conventional fabrication techniques, and demonstrated high speed on-chip graphene interconnects that operates above 1 GHz.
Keywords
CMOS integrated circuits; circuit oscillations; graphene; integrated circuit interconnections; CMOS ring oscillator circuit; frequency 1.3 GHz; high speed on-chip graphene interconnects; high-speed graphene interconnects; size 0.25 mum; CMOS process; CMOS technology; Circuit testing; Conductivity; Fabrication; Integrated circuit interconnections; Integrated circuit technology; Laboratories; Ring oscillators; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424293
Filename
5424293
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