• DocumentCode
    1651252
  • Title

    Reliability assessment of discrete-trap memories for NOR applications

  • Author

    Compagnoni, C. Monzio ; Ielmini, D. ; Spinelli, A.S. ; Lacaita, A.L. ; Sotgiu, R.

  • Author_Institution
    Dipt. di Elettronica e Informazione, Univ. di Milano, Italy
  • fYear
    2005
  • Firstpage
    240
  • Lastpage
    245
  • Keywords
    NOR circuits; charge exchange; hot carriers; nanostructured materials; semiconductor device reliability; semiconductor storage; NOR architecture; bake-accelerated retention tests; channel hot-electron injection; charge localization; charge migration; charge transfer; discrete-trap memories; drain disturb; drain turn; junction edges; nanocrystal memory cells; nitride memory cells; reading drain voltages; reliability; state-of-art flash cells; threshold voltage loss; Channel hot electron injection; Degradation; MOSFET circuits; Material storage; Nanocrystals; Reliability theory; Sociotechnical systems; Testing; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493091
  • Filename
    1493091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651252