DocumentCode :
1651292
Title :
Bake enhanced erratic behavior in gate stress characteristics in flash memories
Author :
Tao, Guoqiao ; Scarpa, Andrea ; van Marwijk, L. ; Dormans, D.
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
fYear :
2005
Firstpage :
246
Lastpage :
249
Keywords :
flash memories; semiconductor device reliability; stress effects; bake enhanced erratic behavior; erased state; flash memories; gate disturbance; gate stress characteristics; positive centers; process induced mobile ions; programmed state; tail distribution; tunnel oxide; Data analysis; Degradation; Electronic mail; Filters; Nonvolatile memory; Performance analysis; Performance evaluation; Probability distribution; Stress measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493092
Filename :
1493092
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1651292
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