Title :
Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance
Author :
Nagashio, K. ; Nishimura, T. ; Kita, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact properties by separating from the intrinsic conduction of graphene.
Keywords :
carrier mobility; contact resistance; field effect transistors; graphene; silicon compounds; Cr-Au-C; Ni-C; Si; SiO2-Si; Ti-Au-C; contact resistance; field effect transistors; graphene contact; high-speed transistor materials; intrinsic mobility; metal contact; metal electrodes; ultra-high mobility graphene; Chromium; Conductivity; Contact resistance; Electrodes; Gold; Inorganic materials; Nonhomogeneous media; Performance analysis; Temperature dependence; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424297
