• DocumentCode
    1651380
  • Title

    Characterization and modeling of low frequency noise degradation due to NMOS hot electron stress

  • Author

    Dey, S. ; Agostinelli, M.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2005
  • Firstpage
    265
  • Lastpage
    268
  • Keywords
    1/f noise; MOSFET; flicker noise; hot carriers; interface states; semiconductor device noise; 1/f noise; NMOS hot electron stress; bias effects; drain current degradation; electrical stress effects; flicker noise; hot carrier effects; low frequency noise degradation; thick gate oxide NMOS transistors; ultra-thin gate oxide NMOS transistors; 1f noise; Degradation; Electrons; Integrated circuit noise; Low-frequency noise; MOS devices; Noise measurement; Radio frequency; Stress; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493096
  • Filename
    1493096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651380