Title :
Improvement of Gain Recovery in QD-VCSOA at 1-Tb/s Cross Gain Modulation Using an Additional Light Beam
Author :
Sahraee, Elham ; Zarifkar, A. ; Sanaee, Maryam
Author_Institution :
Dept. of Commun. & Electron., Shiraz Univ., Shiraz, Iran
Abstract :
The acceleration of gain recovery in quantum dot vertical cavity semiconductor optical amplifiers (QD-VCSOA) is investigated. The 1-Tb/s pattern effect free cross gain modulation in QD-VCSOA can be achieved by using an additional light beam. We can overcome the limitation of the slow transition of carriers from the wetting layer to the excited state by applying a light beam which increases the carrier density in the excited state and thus strongly improves the gain recovery time.
Keywords :
carrier density; excited states; laser beams; optical modulation; quantum dot lasers; semiconductor optical amplifiers; surface emitting lasers; QD-VCSOA; carrier density; carrier transition; excited state; gain recovery acceleration; gain recovery time; light beam; pattern effect free cross gain modulation; quantum dot vertical cavity semiconductor optical amplifiers; wetting layer; Bit rate; Cavity resonators; Current density; Equations; Nonhomogeneous media; Probes; Quantum dots; Gain recovery acceleration; quantum dot (QD); vertical-cavity semiconductor optical amplifier (VCSOA);
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2014.2345658
