Title :
Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels
Author :
Ma, F.-J. ; Rustagi, S.C. ; Zhao, H. ; Samudra, G.S. ; Singh, N. ; Budhaaraju, K.D. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stress-retarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanowires; silicon; Si; oxidation rate enhancement; shape engineering; silicon FIN nanostructures; silicon nanowire channels; stress-retarded orientation-dependent oxidation modelling; universal stress retardation parameter set; Nanoscale devices; Nanostructures; Oxidation; Predictive models; Semiconductor device modeling; Shape; Silicon; Stress; Temperature; Thickness measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424306
