Title :
Nonlinear dynamics approach in modeling of the on-state-spreading - related voltage and current transients in 90nm CMOS silicon controlled rectifiers
Author :
Pogany, D. ; Johnsson, D. ; Bychikhin, S. ; Esmark, K. ; Rodin, P. ; Gornik, E. ; Stecher, M. ; Gossner, H.
Author_Institution :
Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria
Abstract :
Using a theory of front propagation in nonlinear active media we model the on-state spreading related voltage, current and on-state width transients in 90 nm CMOS silicon controlled rectifiers. The model explains well voltage transients during the rising edge of ESD pulses and predicts a non-trivial dependence of device voltage on number of triggering regions.
Keywords :
CMOS integrated circuits; electrostatic discharge; nonlinear dynamical systems; rectifiers; semiconductor device models; silicon; transients; CMOS silicon controlled rectifiers; ESD pulses; Si; current transients; front propagation theory; nonlinear dynamics; on-state spreading related voltage; on-state width transients; size 90 nm; CMOS technology; Current density; Electrostatic discharge; Electrostatic interference; Power system transients; Protection; Semiconductor device modeling; Solid modeling; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424308
