1651613

Process-induced trapping of charge in PECVD dielectrics for RF MEMS capacitive switches

Webster, J.R. ; Dyck, C.W. ; Nordquist, C.D. ; Felix, J.A. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Banks, J.C.

Sandia Nat. Labs., Albuquerque, NM, USA

2005

330

336

MIS devices; dielectric thin films; electron traps; hole traps; internal stresses; microswitches; plasma CVD; reliability; 250 to 350 degC; MEMS reliability; MIS devices; PECVD dielectrics; RF MEMS capacitive switches; SiN:H; SiO₂; SiON; capacitance-voltage measurements; dielectric charging; dielectric incorporated charge; electrical stresses; oxynitride films; plasma damage; plasma-induced stresses; post-deposition stresses; process-induced charge trapping; Dielectric devices; Dielectric losses; Dielectric thin films; Micromechanical devices; Plasma chemistry; Plasma temperature; Radiofrequency microelectromechanical systems; Stress; Switches; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493107

1493107