Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices

Author

Pelaz, L. ; Marques, L. ; Aboy, M. ; Lopez, P. ; Santos, I. ; Duffy, R.

Author_Institution

Univ. of Valladolid, Valladolid, Spain

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

Keywords

MOSFET; Monte Carlo methods; annealing; crystal defects; doping; molecular dynamics method; FinFET; atomistic process modeling; defect removal; hierarchical models; kinetic Monte Carlo; lateral activation; lateral diffusion; millisecond anneals; molecular dynamics; thermal budget; Annealing; Computational modeling; Computer simulation; Doping; Fabrication; Implants; Kinetic theory; Monte Carlo methods; Predictive models; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424309

Filename

5424309