Title :
Quantum capacitance in scaled down III–V FETs
Author :
Jin, Donghyun ; Kim, Taewoo ; Taewoo Kim ; del Alamo, Jesús A.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices, the quantum capacitance significantly lowers the overall gate capacitance. In addition, the channel centroid capacitance is also found to have a significant impact on gate capacitance. Our model provides a number of suggestions for capacitance scaling in future III-V FETs.
Keywords :
III-V semiconductors; capacitance; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InAs; InGaAs; channel centroid capacitance; gate length; high electron mobility transistors; physical gate capacitance model; quantum capacitance; scaled down III-V FET; size 30 nm; CMOS technology; Effective mass; Electrons; FETs; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Insulation; MODFETs; Quantum capacitance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424312
