DocumentCode :
1651704
Title :
Hot carrier generation and reliability of BT(body-tied)-fin type SRAM cell transistors (Wfin=20~70nm)
Author :
Ahn, Young Joon ; Cho, Hye Jin ; Kang, Hee Soo ; Lee, Choong-Ho ; Lee, Chul ; Yoon, Jae-Man ; Kim, Tae Yong ; Cho, Eun Suk ; Sung, Suk-Kang ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-II
Author_Institution :
R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea
fYear :
2005
Firstpage :
352
Lastpage :
355
Keywords :
MOSFET; SRAM chips; hot carriers; semiconductor device reliability; 20 to 70 nm; 50 nm; SRAM cell transistors; body-tied-FinFET; fin type MOSFET; fin width; hot carrier generation; hot carrier generation mechanism; hot carrier immunity; hot carrier reliability; Breakdown voltage; Charge measurement; Current measurement; Fabrication; FinFETs; Hot carriers; Immune system; MOSFETs; Random access memory; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493111
Filename :
1493111
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1651704
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