Logic performance evaluation and transport physics of Schottky-gate III–V compound semiconductor quantum well field effect transistors for power supply voltages (VCC) ranging from 0.5v to 1.0v

Author

Dewey, G. ; Kotlyar, R. ; Pillarisetty, R. ; Radosavljevic, M. ; Rakshit, T. ; Then, H. ; Chau, R.

Author_Institution

Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

In this paper for the first time, the logic performance of Schottky-gate In_0.7Ga_0.3As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V. The QWFET is shown to have measured drive current gain over the Si MOSFET for the entire Vcc range. Effective velocity (V_eff) of the QWFET exhibits 4.6X-3.3X gain over the Si MOSFET. The high V_eff enables 65% intrinsic drive current gain at V_CC = 0.5V and 20% gain at V_CC = 1.0V for the In_0.7Ga_0.3As QWFET over that of Strained Si, despite 2.5x lower charge density.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; quantum well devices; In_0.7Ga_0.3As; Schottky-gate quantum well field effect transistors; charge density; intrinsic drive current gain; logic performance evaluation; power supply voltages; strained MOSFET; transport physics; voltage 0.5 V to 1.0 V; Current measurement; FETs; Gain measurement; Logic; MOSFETs; Physics; Power measurement; Power supplies; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424314

Filename

5424314