Title :
Logic performance evaluation and transport physics of Schottky-gate III–V compound semiconductor quantum well field effect transistors for power supply voltages (VCC) ranging from 0.5v to 1.0v
Author :
Dewey, G. ; Kotlyar, R. ; Pillarisetty, R. ; Radosavljevic, M. ; Rakshit, T. ; Then, H. ; Chau, R.
Author_Institution :
Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA
Abstract :
In this paper for the first time, the logic performance of Schottky-gate In0.7Ga0.3As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V. The QWFET is shown to have measured drive current gain over the Si MOSFET for the entire Vcc range. Effective velocity (Veff) of the QWFET exhibits 4.6X-3.3X gain over the Si MOSFET. The high Veff enables 65% intrinsic drive current gain at VCC = 0.5V and 20% gain at VCC = 1.0V for the In0.7Ga0.3As QWFET over that of Strained Si, despite 2.5x lower charge density.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; quantum well devices; In0.7Ga0.3As; Schottky-gate quantum well field effect transistors; charge density; intrinsic drive current gain; logic performance evaluation; power supply voltages; strained MOSFET; transport physics; voltage 0.5 V to 1.0 V; Current measurement; FETs; Gain measurement; Logic; MOSFETs; Physics; Power measurement; Power supplies; Time measurement; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424314
