DocumentCode
1651725
Title
Impact of proton irradiation on the RF performance of 0.12 /μm CMOS technology
Author
Venkataraman, Sunitha ; Haugerud, Becca M. ; Zhao, Enhai ; Banerjee, Bhaskar ; Sutton, Akil ; Marshall, Paul W. ; Lee, Chang-Ho ; Cressler, John D. ; Laskar, Joy ; Papapolymerou, John ; Joseph, Alvin J.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2005
Firstpage
356
Lastpage
359
Keywords
1/f noise; MOSFET; S-parameters; proton effects; semiconductor device noise; 0.12 micron; 1.0 Mrad; 1/f noise; 63 MeV; CMOS device radiation response; RF MOSFET; S-parameters; broadband noise characteristics; cut-off frequency; equivalent total gamma dose; proton irradiation; room temperature irradiation; threshold voltage degradation; total-dose radiation tolerance; transconductance degradation; CMOS technology; Circuits; Degradation; Low-frequency noise; Noise measurement; Protons; Radiation hardening; Radio frequency; Scattering parameters; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493112
Filename
1493112
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