1651736

Measurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON

Degraeve, R. ; Govoreanu, B. ; Kaczer, B. ; Van Houdt, J. ; Groeseneken, G.

IMEC, Leuven, Belgium

2005

360

365

dielectric thin films; electron traps; hole traps; leakage currents; silicon compounds; statistical analysis; SILC generation rate; SiON; dielectric breakdown; fixed voltage conductivity; gate voltage conduction threshold; progressive wearout effects; single trap current-voltage characteristics; single-trap leakage paths switching behavior; statistical analysis; stress-induced leakage current; trap generation process voltage acceleration; trap generation rate; tunnel current; ultrathin gate dielectrics; Conductivity; Current measurement; Current-voltage characteristics; Degradation; Dielectrics; Leakage current; Presence network agents; Statistical analysis; Stress measurement; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493113

1493113