• DocumentCode
    1651746
  • Title

    VoxEox-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode

  • Author

    Tsujikawa, Shimpei ; Shiga, Katsuya ; Umeda, Hiroshi ; Akamatsu, Yasuhiko ; Yugami, Jiro ; Ohno, Yoshikazu ; Yoneda, Masahiro

  • Author_Institution
    Process Dev. Dept., Renesas Technol. Corp., Hyogo, Japan
  • fYear
    2005
  • Firstpage
    366
  • Lastpage
    371
  • Keywords
    MOSFET; dielectric thin films; semiconductor device breakdown; semiconductor device reliability; silicon compounds; tunnelling; NBTI; SiON; breakdown mechanism; direct hole tunneling; gate doping concentration; interfacial hydrogen release; inversion mode low stress voltage; low-voltage CMOS reliability; oxide field; oxide voltage; p+gate-pMOSFET; ultra-thin gate dielectric breakdown; Breakdown voltage; Dielectric breakdown; Doping; Electric breakdown; Electrons; Low voltage; MOS capacitors; Niobium compounds; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493114
  • Filename
    1493114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651746